Optical properties of CIGS films deposited at room temperature by cathode sputtering from a quaternary target

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Paulo V N Costa
Rodrigo A Medeiro
Carlos L Ferreira
Leila R Cruz

Abstract

CIGS thin film solar cells have reached efficiencies similar to the multicrystalline silicon ones (23%), mainly due to the progress in controlling the properties of the CIGS layer, which is the absorber of the solar radiation. This work analyses the optical properties of CIGS films deposited at room temperature by radio frequency magnetron sputtering using a single quaternary target. The pressure was maintained at 6 mTorr and the power ranged from 90 W and 160 W. After deposition, the films were treated in the absence and presence of selenium vapor. The results showed that both power and heat treatment can be used as controlling parameters of the bandgap and, consequently, of the composition of the films. CIGS films deposited at 160 W and treated at 150 ºC in the presence of selenium vapor presented a bandgap of 1.2 eV, value associated with the Cu(In0,7Ga0,3)Se2, which has the ideal composition for solar cells application.

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How to Cite
Costa, P. V. N., Medeiro, R. A., Ferreira, C. L., & Cruz, L. R. (2021). Optical properties of CIGS films deposited at room temperature by cathode sputtering from a quaternary target. Revista Militar De Ciência E Tecnologia, 38(1), 31-36. Retrieved from http://ebrevistas.eb.mil.br/CT/article/view/8632
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Artigos
Author Biography

Paulo V N Costa, Exército Brasileiro, Instituto Militar de Engenharia. Rio de Janeiro, RJ, Brasil.

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